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1. Chemical structure of some conjugated polymers 

1. Chemical structure of some conjugated polymers 

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The rapid technological developments enforce us to live in an increasingly electronic world, and the revolutionary usage of conjugated polymers in electronics in the late 1970s accelerated these developments, based on the unique characteristics of conjugated polymers, such as low cost, easy processing, mechanical flexibility, large-area application...

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... P2 presents very weak bonds (C-N and C-O) at 1093 cm −1 and strong bonds (C≡C) at 2057, 2127 and 2157 cm −1 . Finally, P3 shows strong bonds (C≡C) at 2049, 2125, 2153 cm −1 and a broad bond (C-H) at 2815 cm −1[37][38][39][40][41][42]. EDS ...
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... Through this, all atomic orbitals are saturated, which lead to insulator Fig. 15. The picture depicts the molecular structure and bond electronic structure of Polyethylene and Polyacetylene [141]. ...
... These π-bonds produce an unpaired electron per carbon through the chain, and each carbon connects to three other ones via a covalent bond. The p-orbital are overlapping and unhybridized P z orbitals, allow the delocalization of π electrons [137,138], which is the main reason of charge transport within molecular chains in conducting polymers [139][140][141]. Throughout the synthesis of the polymerization process in conducting polymers a substantial number of topological defects would appear. ...
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... where simple C-H stretching occurs between 3,000 to 2,800 cm −1 and the corresponding simple bending typically occurs between 1,500 to 1,300 cm −1 [39]. The different vibrational modes can be seen in Figure 6.3 [22]. There are slight energy differences between the vibrational modes in each category, for stretching, in plane bending, and out of plane bending. ...
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... The hybridization orbitals for types sp 1 , sp 2 or sp 3[24]. ...
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... The data shows an absorbance edge at 530 nm and energy bandgap of 2.33 eV. These results are consistent with Bansode and Ogale[77].18 The absorbance spectrum of PS2 (MAPbICl 2 )film. ...
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The main objective of this work was to study the organic-inorganic perovskite to fabricate a solar cell. As well as to explore the benefit of the perovskites band gap tuning to design a photodetector that can be operated either in a specific or wide range of the wavelengths. Different types of perovskites have been prepared successfully and classified into PS1, PS2, PS3, PS4, PS5, PS6, PS7, PS8, PS9, PS10, and PS11 using the one-step method. These perovskite types range from nanometric to micrometric dimensions with different energy gaps. The halide types and its concentration have been changed both in methylamine slat (MA) or lead (Pb) to prepare a new type of perovskites and study the effect of the change. It has been displaced in the energy gaps and in the absorbance edges of some perovskites due to change in the type and concentration of halides. The perovskite photonic device consisted of FTO glasses substrate which was used as a light window and electrode. Electron transport materials (ETM) which allow one or more electrons to pass to the cathode and same time prevent holes from passing through it. TiO2 nanorod was one of the electron transport materials (ETM) which were prepared via hydrothermal method under 160oC for about 7hs. The advantage of prepared TiO2 as nanorod was to increase the area of the surface. Finally, the perovskite can represent the active layer, and metal represents the electrode. Three types of perovskites which were prepared previously, namely PS3, PS4, and PS7 were chosen to fabricate perovskite solar cells. The parameters of the solar cell were calculated depending on current-voltage I-V characteristic curve under simulated solar light (100 mW.cm-2). The efficiency was recorded 1.23 % for the PS3 sample when open circuit voltage VOC=0.43 V, short circuit current JSC=10.7 mA.cm-2, and the fill factor FF=0.26. However, the other efficiencies reached up to 0.9% for the PS4 and 0.1% for PS1 samples. The other application of perovskite devices in this study was in the photodetectors. The main goal of the photodetector work was its responsiveness to the wavelength of the light. This responsiveness is dependent on the bandgap of a photodetector. This was carried out by tuning the bandgap of photodetectors and that was conducted by controlling the type or concentration ratio of the halide which can easily be fabricated with low cost. The photodetectors include four types namely, PS1, PS3, PS4, and PS7. Three wavelengths were used to illumine the photodetectors at 400nm (has intensity = 0.2 mW.cm-2) , 460nm, and 640 nm ( have intensity = 0.9 mW.cm-2) depending on the bandgap of perovskites. The bias voltages Vbias for photodetectors were varied between 0 V as a photovoltaic photodetector and 0.5, 1, and 1.5 V. The fabricated photodetectors operate in the forward and reverse bias at the same time. The results of photoresponse and photodetectors parameters for the forward and reverse bias were almost equal. The photoresponse was directly proportional to the bias voltages and the intensity of illumination. The quantum efficiency QE= 411% for Vbias=0V and increased to 1597%, 1845% when Vbias increased to 0.5, 1 V, respectively, and reached to 2303% at Vbias =1.5 V. These values represented the best photodetector findings which recorded for the PS3 at 400nm wavelength. Rise and fall time was constant with the variable frequency of illumination.