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Cascode GaN devices in dual-phase totem-pole bridgeless PFC rectifier: (a) circuit diagram and (b) PCB layout of the totempole bridgeless PFC with four discrete GaN devices in the red dashed circle. Inductors are mounted on the other side of the PCB.

Cascode GaN devices in dual-phase totem-pole bridgeless PFC rectifier: (a) circuit diagram and (b) PCB layout of the totempole bridgeless PFC with four discrete GaN devices in the red dashed circle. Inductors are mounted on the other side of the PCB.

Source publication
Conference Paper
Full-text available
The totem-pole bridgeless power factor correction (PFC) rectifier has recently gained popularity for ac-dc power conversion. The emerging gallium nitride (GaN) high-electron-mobility transistor (HEMT), having a small body diode reverse recovery effect and low switching loss, is a promising device for use in the totem-pole approach. The design, fabr...

Context in source publication

Context 1
... the previous study [6], four discrete commercial cascode GaN devices in the TO-220 package were used for the totem-pole bridgeless PFC rectifier, as demonstrated inside the red dashed circles in Fig. 2(a) and 2(b). The commercial cascode GaN device in the TO-220 package maintains the GaN HEMT and the Si MOSFET in a side-by-side configuration. The extra turn-on loss and turn-off ringing induced by this packaging structure severely impact the converter's efficiency and reliability. Additionally, the heat sink has to be mounted to the ...

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Citations

... The discrete cascode GaN HEMT has a capacitor mismatch issue [10], which causes extra loss. With the solution proposed here, a full-bridge GaN module [25]- [27] is built with better performance, smaller volume, and improved thermal dissipation capability than existing cascode GaN HEMTs. This design will be applied in the next version totem-pole PFC hardware design, so that both efficiency and power density can be further improved. ...
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The totem-pole bridgeless power factor correction (PFC) rectifier has recently been recognized as a promising front-end candidate for applications like servers and telecommunication power supplies. This paper begins with a discussion of the advantages of using emerging high-voltage gallium-nitride (GaN) devices in totem-pole PFC rectifiers rather than traditional PFC rectifiers. The critical-mode operation is used in the totem-pole PFC rectifier in order to achieve both high frequency and high efficiency. Then, several high-frequency issues and detailed design considerations are introduced, including extending zero-voltage-switching operation for the entire line-cycle, a variable on-time strategy for zero-crossing distortion suppression, and interleaving control for ripple current cancellation. The volume reduction of differential-mode electromagnetic interference filters is also presented, which benefits greatly from MHz high-frequency operation and multiphase interleaving. Finally, a dual-phase interleaved GaN-based MHz totem-pole PFC rectifier is demonstrated with 99% peak efficiency and 220 W/in³ power density.