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... EOS surge separately by the two design functions has changed due to a drive in device miniaturization and cost reduction [2][3][4]. Likewise, in RF PA designs for mobile handset application, the off-chip component, which was placed in the battery connection to mainly mitigate the EOS surge, is removed for cost reduction and device miniaturization (Fig. 1). Therefore, the EOS surge stress is now imposed on the existing on-chip ESD designs. Traditionally, the edge-triggered power clamp is favored as the HBM and CDM protection of DC supply pins due to its lower clamped voltage and ease of simulation and modeling. However, this edge-triggered power clamp in this application only turns on ...
Context 2
... DUT voltages are the readings from peak voltages across the clamps before surge failure [9]. The difference of the two, illustrated as the dark grey area in Figure 10, qualitatively equates the discharging of surge current for the clamp. The ballasted RC clamp shows 17V of surge, while the RC clamp shows 6V surge. ...
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In terms of sustainable power semiconductors, the embedding of an electrostatic discharge (ESD) protection circuit in an integrated circuit (IC) is an important aspect. In order for the semiconductor circuit to operate continuously or stably, a sufficient protection circuit against external surges must be configured. The purpose of this thesis is n...
Citations
... (1)(2)(3)(4) As part of the whole-chip ESD protection, the power clamp circuit is indispensable to prevent thermal breakdown in the internal circuit of ICs. (5)(6)(7)(8)(9)(10)(11) It provides a lowimpedance path for each IC to discharge ESD energy from the power supply line (VDD) to the ground line (GND). A silicon controlled rectifier (SCR) can be used to construct a power clamp circuit; it has high robustness among the several widely used ESD protection devices since its parasitic cross-coupled bipolar junction transistors (BJTs) operate in positive feedback mode. ...
... Here equity of Tunnel FET treasure trove utilization in every range of biosensing of particles in terms of III-V bandgap potential semiconductor materials like silicon (Si), Silicon Dioxide, Hafnium Oxide, and Titanium Dioxide materials play a very important role in designing devices. Where silicon material is one of the good semiconductor materials to achieve more drain current of Double Gate-TFET and Triple Gate Hetero Junction TFETs [3]. ...
We designed a new model tunnel field-effect transistor (TFET) based on Triple Heterojunction Tunnel Field Effect Transistor (THJ-TFET) is investigated and designed in this paper. This structure has a complex body with a metal oxide semiconductor field effect transistor. The integral switching mechanism of Triple Heterojunction TFET differs from conventional TFET and its construction, analytical modeling, and BTBT operations are well suitable for low power electronics. Here triple heterojunction (THJ) tunnel field-effect transistor (THJ-TFET) has been recommended to find the solution for less power usage test for new designs. The Triple Hetero junction TFET device is made up of semiconductors like silicon (Si), Silicon Dioxide (SiO2), Hafnium Oxide (HfO2), and Titanium Dioxide (TiO2) materials are very potential. The Triple Hetero Junction-Tunnel FET device layout with 60 nanometers dimensions and an overall gate length of 5 nm technology is used for the designing of the proposed device (THJ-TFET). The THJ-TFET structure is invented using the TCAD tool with a channel length of 5 nm innovations. Hence Triple Hetero Junction TFET device achieved 5% more drain current (Ion) and has calibrated all the analog parameters and RF parameters.
... Electrical overstress (EOS) protection and electrostatic discharge (ESD) are two important issues for integrated circuits (ICs) [9]- [11]. Recently, several studies have investigated the ESD characteristics of TFETs and proposed a hybrid TFET-MOSFET-based whole-chip ESD protection network [12]- [16]. ...
... However, it is not realistic to use on-chip RC networks to detect EOS events since they have much longer current rise times (generally over 10 μs). Therefore, a voltage detector consisting of a diode string and a resistor is often used [9][10][11]. However, the detection sensitivity and the leakage current of diode-based voltage detectors should be improved. ...
... The characteristics of the proposed TFET-based protection circuit were investigated. The simulation conditions were similar with that used in [11], i.e. an EOS-like pulse is applied to VDD when the IC is under normal operating condition (VDD = 1 V). VDD rises from 1 V to 3 V in 8 μs and causes the conduction of the protection circuit. ...
In this paper, a tunnel field-effect transistor (TFET)-based voltage detector is proposed and its electrical characteristics are investigated using technology computer-aided design (TCAD) simulation. The operating principle of the proposed voltage detector is explained and possible applications in electrical overstress (EOS) and electrostatic discharge (ESD) protection are explored. Moreover, the impact of the key parameters on device performance is also discussed. The simulation results show that the proposed TFET-based voltage detector has a low leakage current and high detection sensitivity under EOS events compared to traditional diode-based detectors. With an additional nMOSFET capacitor, the proposed circuit can also be used for ESD protection.
An important development trend of ON-chip power clamp circuits is that they should be able to deal with more types of power rail overstress events, such as electrostatic discharges (ESDs) and surges. Generally, this requires that the clamp circuit can be fully turned on for the whole duration of the overstress events. In this work, a new MOSFET-based power clamp circuit for concurrent ESD and surge protection is proposed and successfully validated experimentally. An MOSFET controlled by a special bias circuit is inserted into a traditional voltage detector consisting of a diode string and a resistor, resulting in reductions in the leakage current and the trigger voltage. Moreover, the layout area of the proposed clamp circuit is smaller than the traditional
RC
-and diode-triggered clamp circuits. Practical application scenarios and performance comparisons with traditional circuits are also presented.
In recent years, on-chip clamp designs for enhancing destructive immunity of ICs mounted on systems against residual currents of system level immunity tests have been proposed. To cope with a long duration pulse (several tens
${\mu }\text{s}$
) such as a surge immunity test is one of the issues of the system level on-chip clamp. A clamp combined RC-trigger and static trigger is one approach to achieve both a low voltage clamping against component level ESD events and system level surge protection. However, the combined clamp using the conventional static trigger is difficult to achieve both a high current capability against the long pulse event and a low standby leakage current. This work presents a combined clamp that overcome the trade-off between the long pulse current capability and the standby leakage current using a variable holding voltage technique. The proposed clamp achieves the higher current capability against the long pulse event without increasing the standby leakage by holding voltage lowering while keeping a higher trigger voltage. It can contribute to increase PCB design freedom and to protect ICs efficiently from wider time range immunity tests.
