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Comparison of J–V characteristics obtained from our simulation with the experimental results of (a) Shin et al.⁸ and (b) Sun et al.¹⁵
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We propose a silver (Ag) mixed Cu2ZnSnS4 (ACZTS) based solar cell architecture to improve the efficiency of single junction Cu2ZnSnS4 (CZTS) solar cell. The configuration exploits enhancement of depletion region using CdS/ACZTS/CZTS architecture. The doping concentration of different layers is adapted such that the primary absorber layer (ACZTS) ma...
Citations
... SC performance is always influenced by temperature [17]. To study the performance the temperature values are taken from 300 K to 400 K to study the influence, as shown in Figs. 6 and 7. ...
CZTS (copper-zinc-tin-sulfur) has recently emerged as a capable material for next-generation solar devices due to its abundance and lack of toxicity. In this study, we numerically assess the photovoltaic performance of CZTS solar cells integrated with a Back-Surface Field (BSF) layer, which is a novel approach to enhancing solar cell efficiency. We investigate the impact of various parameters, such as temperature, CZTS layer thickness, acceptor doping concentration, metal work function, and series and shunt resistances, on the electrical properties of the sc. We assess the proposed device structure's performance using ideal values for the absorber layer thickness, buffer layer thickness, and doping concentration with silicon as the BSF layer. By optimizing the parameters in each layer, we achieve an efficiency of 20.83%, which is higher than previous reports in the literature. These results provide a foundation for researchers to fabricate highly efficient CZTS solar cell in the future. In summary, our findings demonstrate the potential of CZTS solar cell with a BSF layer to significantly enhance the efficiency of solar devices, and pave the way for further exploration of this technology.
... W was considered based on the grounds that ultrathin WS 2 has high electrical conductivity (with a resistivity of ∼10 3 µΩ cm) and carrier mobility (∼48 cm 2 V − 1 s − 1 ) [26][27][28], which might improve FTO back contact ohmicity. W has a work function of ∼4.5 eV close to that of CZTS (∼5.15 eV) [29,30], which may lower the barrier effect at the interface. Additionally, W layer between Mo and CZTS in the monofacial kesterite based solar cell design was found to react with chalcogen, improving charge collection and short circuit current density up to 30.2 mA cm − 2 [31]. ...
... The historical performance of CZTSe or CZTS-based thin-film solar cells (TFSCs), which was first recognized as a suitable absorber material for solar cells in 1988, has reportedly improved from 0.66% in 1997 [9] to 12.6% in 2013 [7,11]. Based on optoelectronic simulations, it was found that a (ITO/CZTS/ACZTS/CdS) structured device utilizing a silver-based hybrid CZTS (ACZTS) material achieved the highest efficiency of 17.59%, with a corresponding open-circuit voltage (V OC ) of 940 mV [12]. CdTe-based and CIGS photovoltaic (PV) cells now outperform this incredibly promising CZTS/CZTSe technology in terms of efficiency. ...
... It is a semiconductor of the p-type with low electron and hole mobility, a wide absorption spectrum of light band, and a high light absorption co-efficient (10 4 -10 5 cm −1 ). The direct energy band gap is also adjustable, ranging from 0.8 to 1.7 eV [12][13][14]. Apart from that, the absence of zinc (Zn) within the CTSe substance system allows for complete avoidance of the undesirable [Cu Zn +Zn Cu ] defect complexes and the secondary phases associated with Zn [15]. The replacement of Sn through Cu sites is not energetically favoured, since the effective ionic radius of Sn 4+ (0.69) and Cu 1+ (0.77) is significantly different from one another [16]. ...
The current research investigates the (Ni/V 2 O 5 /Cu 2 SnSe 3 /In 2 S 3 /ITO/Al) novel heterostructure of Cu 2 SnSe 3-based solar cell numerically using the SCAPS-1D simulator. The goal of this study is to determine how the proposed cell's performance will be impacted by the V 2 O 5 hole transport layer and the In 2 S 3 electron transport layer. To enhance cell performances, the effects of thickness, carrier concentration and defect in the absorber layer, electron concentration, hole concentration, total generation and recombination, interface defect, J-V and Q-E characteristics, and operating temperature are investigated. Our preliminary simulation results demonstrate that, in the absence of V 2 O 5 HTL, the efficiency of a conventional Cu 2 SnSe 3 cell is 22.14%, a value that is in suitable agreement with the published experimental values. However, a simulated efficiency of up to 32.34% can be attained by using the HTL and ETL combination of V 2 O 5 and In 2 S 3 , respectively, and optimized device parameters. The ideal carrier concentration and layer thickness for the Cu 2 SnSe 3 absorber layer are, 10 18 cm-3 and 1000 nm, respectively,. However, it is also seen that for optimum device performances, the back-contact metal work function (BMWF) must be higher than 5.22 eV. The outcomes of this contribution may open up useful research directions for the thin-film photovoltaic sector, enabling the production of high-efficient and low-cost Cu 2 SnSe 3-based PV cells.
... There are numerous endeavors have also been taken numerically to develop highly efficient CZTS-based TFSCs by remodeling the heterojunction structures. [34][35][36][37][38] The previous numerical approach reports 13.41% conversion efficiency for SLG/Mo/CZTS/CdS/ZnO:Al heterojunction TFSC. 36 It is noticed in the previous studies that the CdS buffer has been extensively employed in the conventional CZTS PV devices to attain the stable performances. ...
... However, the toxic nature of Cd appeals for interdiction of CdS to be used as the buffer layer. 34 An optoelectronic simulation investigation on a silver-mixed CZTS solar cell with CZTS/ACZTS/CdS heterojucntion reports the PCE of 17.59% along V oc of 0.94 V. 35 An efficiency of 23.72% is calculated theoretically for the CZTS-based solar cell comprising glass/Mo/CZTS/CdS/ZnO/FTO heterojunction by Khattak et al. 37 With a heterojunction Mo/CZTSe/CZTS/CdS/ZnO/FTO thin-film PV device inserting a CZTSe BSF layer, a conversion efficiency of 22.03% is obtained numerically. 38 Besides, it is environmentally perilous and has detrimental impact of CdCl 2 treatment in fabricating the CdS films. ...
... It was discovered that as the absorber layer thickness grew, the Voc rose from 1.80 to 1.82 V. It has been stated that the Voc of solar cells is proportional to the generation of charge carriers and that as the generation of charge carriers grows with increasing absorber layer thickness, so does the Voc [61]. The maximum Voc was found when the perovskite layer was 2000 nm thick. ...
In this work, the improved efficiency of an all-inorganic perovskite solar cell (PSC) is anticipated by utilizing theoretical and computational quantum mechanical approaches, including first-principle density functional theory (DFT) and the solar cell capacitance simulator (SCAPS). In order to redesign and improve the performance of the device, the influence of thickness, energy bandgap, operating temperature, defect density and doping concentration of the perovskite layer; electron affinity of ETL; thickness and doping concentration of ETL and HTL, was investigated. For the electron affinity of 3.1 eV of ETL-ZnO; the perovskite layer's defect density of 1E+11 (1/cm3), bandgap of 2.25 eV and thickness of 2000 nm; ETL and HTL optimized thickness of 50 nm and 200 nm; and doping concentration of ETL, HTL and perovskite layer of 1E+19 (1/cm3) were found to generate the greatest performance from the PSC. In order to optimize the bandgap of CuX and further use it to improve the performance of the device, accurate optoelectronic properties of the structure HTL-CuX (X = I, Cl, and Br) were also derived using DFT. This paper details improved device performance to 25.93% with HTL-CuCl and optimized photovoltaic parameters. By maximizing the photovoltaic parameters, this discovery confirmed the photovoltaic potential of PSC and provided a trustworthy, established and reliable way to assess PSC performance by combining device modeling software with first principles DFT.
... 3.6.1.1 Density of States Real dielectric constant can be used to obtain optoelectronic properties such as density of states (free charge carrier concentration to effective mass ratio) and high-frequency dielectric constant linked by the Spitzer-Fan Model (SFM) as given in Eq. 30 (Spitzer and Fan 1957): where, N m f reechargecarrierconcentrationef fectivemassratio(densityofstates), r is the real dielectric constant, ∞ high frequency dielectric constant, e is the electronic charge, c speed of light, N, is charge carrier concentration and m * is the effective mass (m * = 0.18m e ) (Saha and Alam 2018) where m e is the electron mass and 0 is the permittivity in free space. The densityofstates ( N m was determined for all the samples of CCMTS thin films from the linear fitting of the plot of r on the vertical axis and 2 on the horizontal axis ( Fig. 15a) where the slope equals 1 4 2 0 e 2 c 2 N m , while the intercept on the vertical axis equals ∞ . ...
Novel quinternary Cu2Cd1−xMnxSnS4 (0 ≤ x ≤ 1) semiconductor thin films were deposited onto soda lime glass substrates at 300 ℃ by the spray pyrolysis technique to study the effect of Mn content on the structural, compositional, topographical, optical, and electrical properties. X-ray diffraction analysis showed that an increase in Mn content in the Cu2Cd1−xMnxSnS4 films resulted in à transition from the cernyite to stannite phase tetragonal crystal structure and a change in lattice parameters. The intensity of the predominant 112 peak was observed to be relatively low at higher Mn content. Energy dispersive X-ray analysis revealed that the Cu2Cd1−xMnxSnS4 films were Cu-poor, Sn-poor and close to stoichiometry. Atomic force microscopy revealed that the average roughness of the films fluctuated between 43.9 and 73.95 nm. Optical characterization showed a high absorption coefficient of 105 cm⁻¹ while the direct optical band gap and Urbach energy varied between 1.79 and 1.92 eV and 226–564 meV, respectively with an increase in Mn content. Electrical resistivity, hole mobility and carrier concentration were observed to fluctuate between 8.5 × 10² and 2.4 × 10¹ Ωcm, 1.31 × 10¹–6.24 × 10³ cm²/Vs and 2.0 × 10⁷–5.03 × 10¹³ cm⁻³, respectively, with an increase in Mn content. The Cu2Cd1−xMnxSnS4 films exhibited a p-type conductivity. The CCMTS can be used as a top absorber layer of tandem solar cells owing to its optical, structural, and electrical properties.
... Refractive index dispersion can be used to obtain optoelectronic properties such as density of states where * free charge carrier concentration to effective mass ratio or(density of states) , is the real dielectric constant, ∞ high frequency dielectric constant , e is the electronic charge, c speed of light, N, is charge carrier concentration and m * is the effective mass (m * =0.18me) [53] where me is the electron mass and 0 is the permittivity in free space. The density of states ( * ) was determined for all the samples of CCMTS thin films from the linear fitting of the plot of on the vertical axis and 2 on the horizontal axis (Fig. 14) where the slope equals the CCMTS thin films [55] . ...
Novel quinternary Cu 2 Cd 1 − x Mn x SnS 4 (0 ≤ x ≤ 1) semiconductor thin films were deposited onto glass substrates at 300 ℃ by the spray pyrolysis technique to study the effect of Mn content on the structural, compositional, topographical, optical, and electrical properties. X-ray diffraction analysis showed that an increase in Mn content in the Cu 2 Cd 1−x Mn x SnS 4 films resulted in a transition from the cernyite to stannite phase tetragonal crystal structure and a change in lattice parameters. The intensity of the predominant 112 peak was observed to be relatively low at higher Mn content. Energy dispersive X-ray analysis revealed that the Cu 2 Cd 1 − x Mn x SnS 4 films were Cu-poor, Sn-poor and close to stoichiometry. Atomic force microscopy revealed that the average roughness of the films fluctuated between 43.9 -73.95 nm. Optical characterization showed a high absorption coefficient of 10 ⁵ cm ⁻¹ while the direct optical band gap and Urbach energy varied between 1.79–1.92 eV and 226–564 meV, respectively with an increase in Mn content. Electrical resistivity, hole mobility and carrier concentration were observed to fluctuate between 8.5 x10 ² - 2.4 x 10 ¹ Ωcm, 1.31 x 10 ¹ - 6.24 x10 ³ cm ² V/s and 2.0 x 10 ⁷ -5.03 x10 ¹³ cm ⁻³ , respectively with an increase in Mn content. The Cu 2 Cd 1−x Mn x SnS 4 films exhibited a p-type conductivity.
... There are numerous endeavors have also been taken numerically to develop highly efficient CZTS-based TFSCs by remodeling the heterojunction structures. [34][35][36][37][38] The previous numerical approach reports 13.41% conversion efficiency for SLG/Mo/CZTS/CdS/ZnO:Al heterojunction TFSC. 36 It is noticed in the previous studies that the CdS buffer has been extensively employed in the conventional CZTS PV devices to attain the stable performances. ...
... However, the toxic nature of Cd appeals for interdiction of CdS to be used as the buffer layer. 34 An optoelectronic simulation investigation on a silver-mixed CZTS solar cell with CZTS/ACZTS/CdS heterojucntion reports the PCE of 17.59% along V oc of 0.94 V. 35 An efficiency of 23.72% is calculated theoretically for the CZTS-based solar cell comprising glass/Mo/CZTS/CdS/ZnO/FTO heterojunction by Khattak et al. 37 With a heterojunction Mo/CZTSe/CZTS/CdS/ZnO/FTO thin-film PV device inserting a CZTSe BSF layer, a conversion efficiency of 22.03% is obtained numerically. 38 Besides, it is environmentally perilous and has detrimental impact of CdCl 2 treatment in fabricating the CdS films. ...
This study reports on performance enhancement of a Cu2ZnSnS4 solar cell introducing Sb2S3 as hole transport layer (HTL) along WS2 as buffer layer. We have investigated photovoltaic (PV) characteristics by utilizing SCAPS‐1D. A comparative analysis on PV performances between conventional CZTS/CdS and proposed Ni/Sb2S3/CZTS/WS2/FTO/Al solar cells is presented. It is revealed that “spike like” band structure at the CZTS/WS2 interface having smaller conduction band offset makes it potential alternative to commonly used CdS buffer. This report also evaluates that the Sb2S3 as an HTL inserted at the rear of CZTS enhances performances by reducing carrier recombination at back interface with appropriate band alignment. The impacts of thickness, carrier concentration of different layers, and bulk defect density in CZTS as well as the interface defects on cell outputs are analyzed. The influences of temperature, work function, and cell resistances are also examined. Optimum absorber thickness of 1.0 μm along doping density of 10¹⁷ cm⁻³ is selected. A maximum efficiency of 30.63% is achieved for the optimized CZTS cell. Therefore, these results suggest that Sb2S3 as HTL and WS2 as buffer layer can be employed effectively to develop highly efficient and low‐cost CZTS solar cells.
... There are numerous endeavors have also been taken numerically to develop highly efficient CZTS-based TFSCs by remodeling the heterojunction structures. [34][35][36][37][38] The previous numerical approach reports 13.41% conversion efficiency for SLG/Mo/CZTS/CdS/ZnO:Al heterojunction TFSC. 36 It is noticed in the previous studies that the CdS buffer has been extensively employed in the conventional CZTS PV devices to attain the stable performances. ...
... However, the toxic nature of Cd appeals for interdiction of CdS to be used as the buffer layer. 34 An optoelectronic simulation investigation on a silver-mixed CZTS solar cell with CZTS/ACZTS/CdS heterojucntion reports the PCE of 17.59% along V oc of 0.94 V. 35 An efficiency of 23.72% is calculated theoretically for the CZTS-based solar cell comprising glass/Mo/CZTS/CdS/ZnO/FTO heterojunction by Khattak et al. 37 With a heterojunction Mo/CZTSe/CZTS/CdS/ZnO/FTO thin-film PV device inserting a CZTSe BSF layer, a conversion efficiency of 22.03% is obtained numerically. 38 Besides, it is environmentally perilous and has detrimental impact of CdCl 2 treatment in fabricating the CdS films. ...
... Additionally, n-type transparent ZnO window layer are applied as surface field layers. 30 A transparent conductive layer AZO z E-mail: s.r.routray@ieee.org; yehia.massoud@kaust.edu.sa ...
Kesterite materials are popular for low-cost photovoltaic and opto-electronic applications. Currently, the efficiency of kesterite-based CZTSe material is only 12% due to the poor quality of the material. As an alternative, substituting Sn with Ge as Cu-Zn-Ge-Se (CZGSe) not only enhances the optical properties of materials but also improves the performance of solar cells. The carrier dynamics of the device were examined with variation of different parameters like doping. The worst-case behavior of the device was also examined by adding different loss mechanisms such as deep defects and traps. A remarkable efficiency of 19% and worst case efficiency of 11% could achieved from the proposed device
