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Band diagram of a 10-junction tandem solar cell designed using InGaN so that the photo-generated current for each sub-cell is matched. Each sub-cell has a window layer, a back-surfacêeld layer and is connected using a tunnel junction. 28 542-( )J. Vac. Soc. Jpn.

Band diagram of a 10-junction tandem solar cell designed using InGaN so that the photo-generated current for each sub-cell is matched. Each sub-cell has a window layer, a back-surfacêeld layer and is connected using a tunnel junction. 28 542-( )J. Vac. Soc. Jpn.

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Table 1 Reports on homojunction In x Ga 1 x N solar cells.
Fig. 2 Expected output performance for multi-junction tandem cells with...
Table 2 Reports on sandwich type In x Ga 1 x N solar cells.
Fig. 3 Band diagram of a 10-junction tandem solar cell designed using...
+3 Fig. 6 X-ray diŠraction 2 u/v proˆles for MOVPE InGaN grown on Si(111).
Recent Progress and Challenges in InN-based Solar Cells (Japanese Title: 窒化インジウム系半導体太陽電池の最近の動向と課題)
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  • Jan 2012
抄録 The revision of InN bandgap to a much narrower value (≈0.7 eV) has opened the new research on InN-based solar cell. For InN-based materials, multi-junction solar cell seems to be the most promising approach, because a wanted bandgap between 0.6 and 2.5 eV can be obtained by using the alloy materials. Many groups have reported homojunction-type o...
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