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Atomic force microscopy images of Cu 4 SnS 4 thin films at different deposition potentials (versus Ag/AgCl) (a)-400 mV (b)-600 mV (c)-800 mV (d)-1000 mV
Source publication
In this work the synthesis of copper tin sulfide thin films by electrodeposition is carried out. The films were deposited onto ITO glass substrates from an aqueous solution bath containing copper sulfate, tin chloride and sodium thiosulfate at pH 1 and room temperature. Prior to the deposition, a cyclic voltammetry experiment was carried out betwee...
Contexts in source publication
Context 1
... surface images in an area of 10 μm X 10 μm of the thin films deposited at various deposition potential values are shown in Figure 3. It can be observed that the surface of the films is not very compact (Figure 3a). ...
Context 2
... surface images in an area of 10 μm X 10 μm of the thin films deposited at various deposition potential values are shown in Figure 3. It can be observed that the surface of the films is not very compact (Figure 3a). The films are constituted by micro particles with an irregular size distribution. ...
Context 3
... AFM images of samples clearly show the conversion of micro particles into spherical grains that were quite uniform over the entire glass substrate (Figure 3b). However, it is seen from the intensity distribution that the film consists of smaller and larger micro particles in deposition potential above -800 mV (Figure 3c,d). ...
Context 4
... AFM images of samples clearly show the conversion of micro particles into spherical grains that were quite uniform over the entire glass substrate (Figure 3b). However, it is seen from the intensity distribution that the film consists of smaller and larger micro particles in deposition potential above -800 mV (Figure 3c,d). At the right hand side of the image, intensity strip is shown which indicates the height of the surface grain along Z-axis. ...
Citations
Sequential layering of Zn and Sn on Cu foil by electrolysis of appropriate salt solution is carried out. The layered metals are annealed at 350˚C to form Cu-Zn-Sn alloy. To the alloy, 30g of (excess) elemental sulphur powder is added and sulphurized at 350˚, 450˚, 550˚ and 650˚C. Structural, morphological, optical and electrochemical investigations revealed CZTS as favourable phase at all sulphurization temperatures. Electrochemical Impedance studies in conjunction with Raman spectroscopy indicated negligible secondary phases for CZTS-550˚C when compared to CZTS synthesized at other temperatures. For CZTS-550˚C, UV-vis DRS studies depicted 1.51 eV as band gap and high absorption coefficient of 105 cm-1. Thus CZTS synthesized by the demonstrated procedure can be suitable for optoelectronic applications.
