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![Atomic arrangement of (a) Na2S and (b) (NH4)2S passivated GaAs surface [37] Beeslov.](publication/351869337/figure/fig1/AS:1027628010057728@1622017018054/Atomic-arrangement-of-a-Na2S-and-b-NH42S-passivated-GaAs-surface-37-Beeslov.png)
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GaAs surface is characterized by a high density of surface states, which preclude the utilization of this semiconducting material for the realization of several advanced devices. Sulfur-based passivation has been found significantly useful in reducing the effect of dangling bonds. In this article first, the problem associated with GaAs surface has...
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Context 1
... the case of low temperature S passivation methods, sodium sulfide passivation mainly produced As-S type bonds on Ga terminated surface Ga-S, As-S and S-S bonds were observed after (NH4)2S based sulfide treatment Fig. 6 [17]. The models presented in Fig. 3 for (NH4)2S treated GaAs, have not incorporated the presence of Ga-S bonds, which were present on ammonium sulfide treated GaAs surface [17]. Presence of Ga-S bonds, along with As-S bonds, was validated by an XPS study conducted on nonaqueous (NH4)2S solution treated GaAs surface [15]. It is quite ...
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