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![ATE general diagram blocks [13, 14]](profile/Luis-Seixas-Junior/publication/314278421/figure/fig1/AS:961706926813185@1606300207420/ATE-general-diagram-blocks-13-14.gif)
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![ATE general diagram blocks [13, 14]](profile/Luis-Seixas-Junior/publication/314278421/figure/fig1/AS:961706926813185@1606300207420/ATE-general-diagram-blocks-13-14_Q320.jpg)
This article describes in detail a custom, high-performance, compact, flexible and reconfigurable test equipment. This measurement system is able to perform, locally or remotely, the electrical characterization of semiconductor devices and integrated circuits (ICs) under ionizing irradiation tests. This measurement platform can be managed remotely...
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Citations
... Ionizing radiation effects in integrated circuits (ICs) significantly affects the reliability of electronic systems exposed to such environmental condition. An important class of effect in MOS transistors is the Total Ionizing Dose (TID), which causes electrical degradation due to the accumulation of trapped charges in the insulation oxides, affecting the threshold voltage ( V th ) of transistors, the leakage current and the carrier mobility, among other parameters [30][31][32]. These effects usually depend on biasing, switching frequencies, and size of the transistors [3,14,21,34,37] and may even lead to complete system failure. ...
This paper describes the main failure mechanism of charge redistribution Successive Approximation Register (SAR) Analog-to-Digital Converters (ADCs) under radiation. Results of two different radiation experiments (gamma and X-ray) each considering two identical 130nm, 8-bit SAR ADCs, operating with distinct sampling rates, showed that lower sampling frequencies cause the converters to fail at lower accumulated dose, while increasing the sampling frequency increases the converters robustness to radiation. A SPICE model of a SAR ADC is used to simulate radiation induced leakage effects, considering the same technology node and operating conditions of the tested converters. A very good agreement between simulation results and gamma irradiation experimental data allows us to explain the main failure mechanism, which is related to leakage in switches connected to the programmable capacitor array of the internal DAC of the converter.
