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AFM top view of thin film samples (a) as-deposited, (b) post annealed at 250 °C and (c) post annealed at 350 °C on silicon substrate. (d) Shows the as-deposited thin film on a glass substrate.

AFM top view of thin film samples (a) as-deposited, (b) post annealed at 250 °C and (c) post annealed at 350 °C on silicon substrate. (d) Shows the as-deposited thin film on a glass substrate.

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Ion beam sputtering is a versatile technique to create nanostructured thin films with precise control over process parameters. We report the properties of graphitic carbon nitride (g-C3N4) thin films deposited by ion beam sputtering. Ion beam analysis methods including Rutherford Backscattering Spectrometry (RBS), Nuclear Reaction Analysis (NRA) an...

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... measurements were performed to study the microstructural evolution of the surface morphology in as-deposited and annealed films. Fig. 3 shows the AFM top view of the asdeposited g-C 3 N 4 film (a) together with the thin films annealed at 250 °C (b) and 350 °C (c). The surface of the as-deposited thin film ( Fig. 1(a)) consists of clusters with an average surface roughness of 1.34 nm. After heat treatment at 250 °C, the thin film started to re-crystallize with an ...

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... Many promising catalytic materials have been developed, for example, non-metallic graphitic carbon nitride (g-C 3 N 4 ) offers catalytic performance together with thermodynamic stability and engineerability (Wang et al. 2009). We have explored and reported our early investigations on the deposition of g-C 3 N 4 thin films via ion beam sputtering technology (Sharath et al. 2021). By directly using compressed g-C 3 N 4 powders as the sputter target material and tuning the sputtering parameters, we successfully synthesised g-C 3 N 4 thin films with a well-controlled deposition rate at ambient conditions using the ion beam sputtering technique at a sputter angle of 45°and substrate angle of 60°. ...
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