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AFM images of 5 × 5 µm² AlN layers corresponding to (a) before and (b)–(f) after post-growth annealing. (b) Sample a and (c)–(f) Sample b. The time of post-growth annealing was labeled.
Source publication
AlN layers were grown on a c-plane sapphire substrate by metal–organic vapor phase epitaxy (MOVPE) at 1350 °C. The structural quality of the grown AlN layers was drastically improved by post-growth annealing in mixed hydrogen, ammonia, and trimethylgallium ambiance at 1350 °C. As a first step, we grew the AlN layers exhibiting a double-domain struc...
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