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A possible interpretation of the peak of V CPD in the BDR of TBH 2 Pc/PTCBI/ITO due to the lateral charge transfer from H 2 Pc to PTCBI 

A possible interpretation of the peak of V CPD in the BDR of TBH 2 Pc/PTCBI/ITO due to the lateral charge transfer from H 2 Pc to PTCBI 

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Generally, p-n junction-based solar energy conversion has the disadvantage of a loss in potential gain in comparison with the photon energy. In this study, we found a more positive potential for a lateral domain interface of p-n junction than for a conventional p-n junction. A terrace bilayer (TB) p-n junction of phthalocyanine (H 2 Pc) and 3,4,9,1...

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... for the SKPM measurement, a source of error was the sample-tip probe capacitance due to the geometrical effect of the tip apex 54 . The tip dependence was within the error for the sample above, as shown in Figure S5, where a sample was mea- sured using two different tips of the cantilever. However, the sample dependence of V CPD was larger than the tip dependence, as shown in Figure S6, for the same type of sample series. ...
Context 2
... is that the V CPD peak originates from the localization of positive charges due to the lateral component of the p-n junction, where the charge transfer occurs not only in the substrate's normal direction but also in the lateral direc- tion. As a result of such a lateral polarization, a positive peak might occur in the BDR, as shown in Fig. ...

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