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Based on the earlier experimental investigation of the existing GaAs pHEMT small‐signal modeling approaches and their applicability to different manufacturing processes, a combined automatic small‐signal noise model extraction technique, suitable for design of low‐noise and buffer amplifiers is proposed. The technique is based on the usage of measu...
Citations
... Multiport RF devices such as antennas, couplers and dividers may need to be designed by assembling several circuit stages (or blocks) where each one is separately optimized. [3][4][5][6][7] Multipin connectors currently developed to assemble PCBs and cables for the up-to-date ethernet communications up to 100 Gbps per single channel lane is another example. 8,9 From a modeling point of view the multiport S-parameters can effectively describe multilayer PCBs structure such as DDR4 memories, 5 signal busses [10][11][12] and vias [13][14][15][16][17] or signal integrity analysis effects such as crosstalk. ...
... where an indication of the submatrices and of the subvectors is given for sake of clarity. A more compact form of (4) is proposed in (5) in which the input waves of network 1 and the output waves of networks 2 are named as "external" (subscript "e"), whereas the output waves of network 1 and the input waves of network 2 are named "internal" (subscript "i"). ...
The complexity of electronic systems for RF and digital applications is ever increasing, and the corresponding compliance analysis for ensuring the required specifications in terms of performances, signal and power integrity is a challenging task often accomplished by relying on commercial circuit simulators. The modeling of multiport devices involves the assembly of electrical networks usually described in terms of S-parameter. This work proposes a new single-step algorithm that computes the global S-parameter matrix for a cascade of multiple networks with multiple ports without the need of any S-parameter transformation in T-parameters and their inverse transformation. The proposed method involves the construction of a large matrix filled with all S-parameters of all networks, and the subsequent evaluation of only one matrix expression. The proposed method is shown to be very efficient and reliable, since it can be easily automated without the need of a manual connections of tens or even hundreds of ports of the multiple blocks, which is an action that needs to be performed within a typical circuit simulator environment. Also, the proposed method overcomes the limitation of the standard method based on S-to-T parameter transformation since it is of general applicability to networks with different number of input and output ports. Examples involving the cascade of multiple 2-ports and multiports networks are considered, and the results are validated and compared with the reference results obtained from a commercial circuit simulator. The proposed method is shown to be effective and fast compared to its counterpart based on the T-parameters.
... The main effectiveness of using signal flow graph analysis is in calculation of the input and output reflection coefficients. Overall, these graphs allow calculating power and voltage gain [1][2][3][4]. ...
... Admittances add together for shunt-connected circuits. Additionally, 1 1 . ...
Предложен программный метод проектирования двухкаскадных широкополосных малошумящих усилителей. Новизна метода проектирования заключается в применении расширенной диаграммы Смита в сочетании с такими современными инструментами, как сценарии Matlab, программное обеспечение AWR Design Environment. В статье в графическом виде даны необходимые пояснения их совместного использования. Для анализа предлагаемого метода проектирования составлена программа на базе Phyton, которая содержит алгоритм расчета параметров. В результате анализа выявлено, что предлагаемый метод позволяет в интерактивном режиме исследовать влияние входных параметров на предмет шума, стабильности и значений усиления. В целом предлагаемый метод облегчает проектирование согласующих цепей для преобразования импеданса источника и нагрузки до оптимальных величин с целью достижения желаемых характеристик усиления и шума. Программное моделирование схемы позволяет улучшить эффективность проводимого анализа и оценить свойства исследуемой схемы. Результаты, полученные в ходе реализации устройства на плате, позволяют утверждать, что апробация методики выполнена успешно и требуемые характеристики были обеспечены. Предлагаемое решение подтверждено радиочастотными измерениями на частоте 3,5 ГГц и протестировано в нескольких частотных диапазонах на предмет шума, стабильности и значений усиления. Представленная в статье методика может быть использована при разработке и проектировании современных СВЧ-усилителей, а также для исследования и анализа эффективности существующих устройств.
... The calculated parameters of models of several inductors are given in Table 2. The methods used to extract the parameters of active and passive element models are described in detail in [23][24][25]. To stimulate the microstrip transmission lines, we set the following substrate parameters and inhomogeneities: relative dielectric constant 12.9, substrate thickness 100 μm, conductor thickness 3 μm, and loss tangent of dielectric 0.001. ...
This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, and transistors. The developed PDK can be used in technology transfer or education.
We propose the techniques for automatic processing of measurement results in the context of golden (typical) device selection and noise figure measurement. These techniques are for golden (typical) device selection and noise figure measurement processing. Automation of measurement result processing and microwave element modeling speeds up a modeling routine and decreases the risk of possible errors. The techniques are validated through modeling of 0.15 μm GaAs pHEMTs with 4 × 40 μm and 4 × 75 μm total gate widths. Two test amplifiers were designed using the developed models. The amplifier modeling results agree well with measurements which confirms the validity of the proposed techniques. The proposed algorithm is potentially applicable to other circuit types (switches, digital, power amplifiers, mixers, oscillators, etc.) but may require different settings in those cases. However, in the presented work, we validated the algorithm for the linear and low-noise amplifiers only.
