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... have been carried out on 4.5 kV/ 35 A SPT+ IGBTs which were mounted on test substrates similar to the one shown in Fig 1. The test substrates consist of 4 IGBTs in parallel with two anti-parallel diodes. ...
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... [V] Fig. 10. HTRB results at 4.5 kV blocking voltage for three ambient temperature levels: 130ºC, 135ºC, and 140ºC. Fig. 10 shows the leakage current of each module as a function of time for three ambient temperature steps: 130ºC, 135ºC, and 140ºC. Note that the junction tem- perature would be about 5ºC higher depending on the heat dissipated due ...
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... [V] Fig. 10. HTRB results at 4.5 kV blocking voltage for three ambient temperature levels: 130ºC, 135ºC, and 140ºC. Fig. 10 shows the leakage current of each module as a function of time for three ambient temperature steps: 130ºC, 135ºC, and 140ºC. Note that the junction tem- perature would be about 5ºC higher depending on the heat dissipated due to the leakage current. As seen in comparison with Fig. 9, the modules number 8 and 7 which are the first ones ...
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... have been carried out on 4.5 kV/35 A SPT + IGBTs which were mounted on test substrates similar to the one shown in Fig. 1. The test substrates consist of 4 IGBTs in parallel with two anti- parallel diodes. However, this study has been carried out on a single IGBT, thus the bond wires between the chips were ...
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Citations
... If the heat is not conducted in time, it will burn the IGBT module. Thus, it is imperative to develop effective heat-dissipating/cooling components for IGBT [8,9]. ...
With the trend of high integration and high power of insulated gate bipolar transistor (IGBT) components, strict requirements have been placed on the heat dissipation capabilities of the IGBT devices. On the basis of traditional rectangular fins, this paper developed two new types of heat-dissipating fins to meet the high requirements of heat dissipation for the IGBT devices. One is the rectangular radiator with a groove length of 2.5 mm and a width of 0.85 mm, the other is the arc radiator with the angle of 125 arc angle, 0.8 mm arc height, and 1.4 mm circle radius. After theoretically calculating the IGBT junction temperature, numerical simulations have been implemented to verify the theoretical result. The commercial CFD software, STAR-CCM+, was employed to simulate the heat dissipation characteristics of the IGBT module under different wind speeds, power, and fin structures. By analyzing the temperature field and vector field of the IGBT module, the analysis results demonstrate that the error between the simulation result and the theoretical calculation is within 5%, which proves the feasibility of the newly designed heat-dissipating fins. When the wind speed is 12.5 m/s, the power is 110 W, the fin height is 31.2 mm, and the fin thickness is 2.3 mm, the rectangular radiator can achieve the best heat dissipation performance.
This study proposes a novel design for a pin-fin heat sink and optimizes it to enhance the thermal performance of double-sided cooling (DSC) power modules applied in inverters for xEV applications. The circular pin-fins are conventionally adopted in automotive power modules. In this study, to decrease the junction temperature with the maximum (
T<sub>j,max</sub>
) of IGBT bare-die, the pin-fin shapes are modified from conventional circular to a rounded rectangle. For further
T<sub>j,max</sub>
reduction, the angle of the rounded-rectangular pin-fin is tilted. These shape modifications reduce the IGBT’s
T<sub>j,max</sub>
thanks to three main reasons: (1) increased coolant velocity by reducing pin-fin spacing, (2) reduced wake behind the new pin-fin shapes, and (3) increased turbulence in the coolant by tilting the pin-fin angle. Finite volume method (FVM) simulations demonstrate that the best performance is achieved when the rounded-rectangular pin-fin is tilted by +15°. This enhanced new pin-fin design was fabricated and measured to demonstrate that the maximum device junction temperature was reduced by approximately 15.5 °C compared to a conventional counterpart. Moreover, the module thermal resistance was also decreased from 0.298 °C/W to 0.228 °C/W (by ~23 %) with an acceptable pressure drop. These results demonstrate that the proposed new pin-fin design is an effective heat-sink solution for indirect double-sided cooled modules and, once enhanced, can be comparable with direct cooled modules.
The thermal management system for power electronics is becoming a key factor in order to guarantee optimal working conditions, efficiency and safety of those components. In the field of liquid-cooled power electronics, the design of an optimal liquid cold plate (LCP) is fundamental to increase the heat transfer, minimizing the maximum temperature and the pressure drop. This work presents an optimization procedure of a finned extruded profile of an LCP for insulated gate bipolar transistor (IGBT) power module, for railway propulsion. The optimization has been performed through DOE, by considering different values of several control factors (shape of the fin, length of the fin, pitch between the channels created by the fins), in order to minimize the LCP maximum temperature and the pressure drop between inlet and outlet. The combination of different values of control factors results in 18 prototypes, which have been compared using three-dimensional CFD simulations, performed in Ansys Fluent environment. The influence of parameters variation on the objective functions (i.e. maximum temperature of the liquid cold plate and pressure drop) has been verified.
In this work we studied the effect of a post-bonding thermal treatment on thick aluminum wirebonds lifetime in IGBT power modules during power cycling at different temperature swings. A reliability improvement of up to 44% is demonstrated for the bonds located at the center of the chip and seeing the highest thermal treatment temperature. The physical phenomena occurring during the thermal treatments and during power cycling are studied using microstructure analysis (Scanning Electron Microscopy techniques) and nanoindentation. Softening of the material results from recrystallization and/or recovery during thermal treatment, whereas during power cycling the thermal treated material hardens due to strain accumulation and defect formation. Despite the hardening our data suggests a decrease in crack growth rate at the second half of the testing time. We implemented an approach for applying thermal treatments during typical operating conditions in a converter by controlling the off-state losses of a device in a multichip configuration. The stability and the limits of this approach are studied experimentally and described by an electrothermal model. This study allows us to conclude on a realistic process window for online thermal treatments, by considering both material constrains and practical temperature control limits.
