Figure 2 - uploaded by Chetna Soni
Content may be subject to copyright.
Source publication
In this paper RF MEMS Series Switch device based on electrostatic actuation principle is presented. At corners of centre beam four serpentine shape meanders are used which provide better displacement. The simulation results using Coventorware software are presented. The displacement of the centre beam as a function of the applied voltage, operating...
Similar publications
We propose a high-voltage switch driven by wavelength-modulated light, which is suitable for remote MEMS (especially electrostatic actuators) device operation. It is fabricated on an SOI wafer and consists of series-connected n-MOSFETs whose substrates are mesa-isolated, allowing the switch to endure a high voltage. The fabrication process requires...
Commercial success of microelectromechanical systems (MEMS) switches is limited by several issues. A high actuation voltage requires special circuitry solutions that increase size and cost of the switch. Another problem is the lack of reliability due to the stiction phenomenon. This paper presents a single-pole double-throw MEMS switch with electro...
In this work we propose a novel idea, which allows the integration of Radio Frequency Microelectromechanical Systems (RF MEMS) switches on Low Temperature Co-fired Ceramic (LTCC) using low cost materials and assembly techniques. Shunt switches and varactors can be realized using aluminium foil cantilevers, which can be actuated under electrostatic...
The design of capacitive shunt RF MEMS switch for low actuation voltage is described. The switching element is a thin metallic membrane which has two states: up and down. A RF signal can be transmitted or blocked through these states. Electrostatic actuation mechanism is used to actuate the membrane by applying a voltage bias to actuation electrode...
This work presents the study of Radio-Frequency Micro-Electro Mechanical (RF MEMS) switches and is inspired by their superior performance over the contemporary solid-state devices (MESFET, PIN diode etc.) and their excellent performance in the field of communications for the past decade. The study focuses on the realization of electrostatically act...
